Physical Electronics
EE 338, 3 Units
Fall 2002
11:00-12:20 AM, TuTh, GFS 101
Prerequisite: EE 202L, PHYS 152L

Course Description

Semiconductor device characteristics and applications.  Physical models of electronic conduction in solids, p-n junctions, bipolar and field effect transistors and other solid state devices.

Instructor Discussion TA
Name: Marko Sokolich Greeshma Gupta
Phone: 310.317.5148 213.740.xxxx
Office Hours: Th 10:00-11:00

Solid State Electronic Devices by. Ben G. Streetman and Sanjay Banerjee (fifth edition)

Semiconductor Device Fundamentals by Robert F. Pierret
Physics of Semiconductor Devices by Michael Shur
Devices for Integrated Circuits by H. Craig Casey, Jr.

Links (more links as class progresses!)

KSU Visual Quantum Mechanics Site

SUNY Buffalo Semiconductor Applets


Semiconductor Physics: bands in semiconductors, basic quantum mechanics, effective mass, doping, density of states, fermi function, carrier concentration, drift, diffusion, absorption, recombination lifetime

Device Fabrication

pn junctions: electrostatics, depletion width, built-in potential, qualitative operation, ideal diode equation,  high injection, avalanche breakdown, tunneling, AC analysis, Schottky barriers, heterojunctions

MOSFETs: MOS capacitor, DC characteristics of MOSFETs, transient properties

Bipolar Junction Transistors: qualitative description, Ebers-Moll model, deviations from ideal, small-signal equivalent circuits

Grading Policy

2 Exams  20% each
Homework  20%
Final Exam 40%

The first exam will follow the semiconductor physics section of the class.  The second exam will cover pn junctions.  The final exam will be cumulative, but it will have more emphasis on MOS and bipolar junction transistors than on the previous material.

Homework will be handed out on Thursday and due the following Thursday in class.

Any violations of the University Student Conduct Code will be referred to the Office of Student Conduct.

Page last updated: Aug. 23, 2002
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